? semiconductor components industries, llc, 2004 june, 2004 ? rev. 1 1 publication order number: 2n4403/d 2n4403 preferred device general purpose transistors pnp silicon features ? pb?free packages are available* maximum ratings rating symbol value unit collector ? emitter voltage v ceo 40 vdc collector ? base v oltage v cbo 40 vdc emitter ? base v oltage v ebo 5.0 vdc collector current ? continuous i c 600 madc total device dissipation @ t a = 25 c derate above 25 c p d 625 5.0 mw mw/ c total device dissipation @ t c = 25 c derate above 25 c p d 1.5 12 w mw/ c operating and storage junction temperature range t j , t stg ?55 to +150 c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. thermal characteristics characteristic symbol max unit thermal resistance, junction?to?ambient r ja 200 c/w thermal resistance, junction?to?case r jc 83.3 c/w *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting t echniques reference manual, solderrm/d. to?92 case 29 style 1 3 2 1 y = year ww = work week marking diagram 2n 4403 yww see detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. ordering information http://onsemi.com collector 3 2 base 1 emitter preferred devices are recommended choices for future use and best overall value.
2n4403 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector?emitter breakdown v oltage (note 1) (i c = 1.0 madc, i b = 0) v (br)ceo 40 ? vdc collector?base breakdown voltage (i c = 0.1 madc, i e = 0) v (br)cbo 40 ? vdc emitter?base breakdown voltage (i e = 0.1 madc, i c = 0) v (br)ebo 5.0 ? vdc base cutoff current (v ce = 35 vdc, v eb = 0.4 vdc) i bev ? 0.1 adc collector cutoff current (v ce = 35 vdc, v eb = 0.4 vdc) i cex ? 0.1 adc on characteristics dc current gain (i c = 0.1 madc, v ce = 1.0 vdc) (i c = 1.0 madc, v ce = 1.0 vdc) (i c = 10 madc, v ce = 1.0 vdc) (i c = 150 madc, v ce = 2.0 vdc) (note 1) (i c = 500 madc, v ce = 2.0 vdc) (note 1) h fe 30 60 100 100 20 ? ? ? 300 ? ? collector? emitter saturation voltage (note 1) (i c = 150 madc, i b = 15 madc) (i c = 500 madc, i b = 50 madc) v ce(sat) ? ? 0.4 0.75 vdc base? emitter saturation voltage (note 1) (i c = 150 madc, i b = 15 madc) (i c = 500 madc, i b = 50 madc) v be(sat) 0.75 ? 0.95 1.3 vdc small?signal characteristics current? gain ? bandwidth product (i c = 20 madc, v ce = 10 vdc, f = 100 mhz) f t 200 ? mhz collector?base capacitance (v cb = 10 vdc, i e = 0, f = 1.0 mhz) c cb ? 8.5 pf emitter?base capacitance (v eb = 0.5 vdc, i c = 0, f = 1.0 mhz) c eb ? 30 pf input impedance (i c = 1.0 madc, v ce = 10 vdc, f = 1.0 khz) h ie 1.5 k 15 k ohms voltage feedback ratio (i c = 1.0 madc, v ce = 10 vdc, f = 1.0 khz) h re 0.1 8.0 x 10 ?4 small?signal current gain (i c = 1.0 madc, v ce = 10 vdc, f = 1.0 khz) h fe 60 500 ? output admittance (i c = 1.0 madc, v ce = 10 vdc, f = 1.0 khz) h oe 1.0 100 mhos switching characteristics delay time (v cc = 30 vdc, v be = + 2.0 vdc, t d ? 15 ns rise time (v cc 30 vdc, v be + 2.0 vdc, i c = 150 madc, i b1 = 15 madc) t r ? 20 ns storage time (v cc = 30 vdc, i c = 150 madc, t s ? 225 ns fall time (v cc 30 vdc, i c 150 madc, i b1 = 15 ma, i b2 = 15 ma) t f ? 30 ns 1. pulse test: pulse width 300 s, duty cycle 2.0%.
2n4403 http://onsemi.com 3 ordering information device package shipping 2 2n4403 to?92 5,000 units / box 2n4403g to?92 (pb?free) 5,000 units / box 2n4403rl to?92 2,000 / tape & reel 2n4403rlra to?92 2,000 / tape & reel 2n4403rlrag to?92 (pb?free) 2,000 / tape & reel 2n4403rlrm to?92 2,000 / ammo pack 2n4403rlrp to?92 2,000 / ammo pack 2n4403rlrpg to?92 (pb?free) 2,000 / ammo pack 2N4403ZL1 to?92 2,000 / ammo pack 2for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. figure 1. turn?on time figure 2. turn?off time switching time equivalent test circuit scope rise time < 4.0 ns *total shunt capacitance of test jig connectors, and oscilloscope +2 v -16 v 10 to 100 s, duty cycle = 2% 0 1.0 k -30 v 200 c s * < 10 pf 1.0 k -30 v 200 c s * < 10 pf +4.0 v < 2 ns 1.0 to 100 s, duty cycle = 2% < 20 ns +14 v 0 -16 v figure 3. capacitances reverse voltage (volts) 7.0 10 20 30 5.0 figure 4. charge data i c , collector current (ma) 0.1 2.0 5.0 10 20 2.0 30 capacitance (pf) q, charge (nc) 2.0 3.0 5.0 7.0 10 1.0 10 20 50 70 100 200 0.1 300 500 0.7 0.5 v cc = 30 v i c /i b = 10 c eb q t q a 25 c 100 c transient characteristics 3.0 1.0 0.5 0.3 0.2 0.3 0.2 30 c cb 0.7 7.0
2n4403 http://onsemi.com 4 figure 5. turn?on time i c , collector current (ma) 20 30 50 5.0 10 7.0 figure 6. rise time i c , collector current (ma) figure 7. storage time i c , collector current (ma) t s , storage time (ns) t, time (ns) 70 100 10 20 50 70 100 200 300 500 30 i c /i b = 10 t r @ v cc = 30 v t r @ v cc = 10 v t d @ v be(off) = 2 v t d @ v be(off) = 0 20 30 50 5.0 10 7.0 70 100 10 20 50 70 100 200 300 500 30 v cc = 30 v i c /i b = 10 10 20 50 70 100 200 300 500 30 100 20 70 50 200 30 t r , rise time (ns) i c /i b = 10 i c /i b = 20 i b1 = i b2 t s = t s - 1/8 t f 6 8 10 0 4 2 0.1 2.0 5.0 10 20 50 1.0 0.5 0.2 0.01 0.02 0.05 100 figure 8. frequency effects f, frequency (khz) small?signal characteristics noise figure v ce = ?10 vdc, t a = 25 c; bandwidth = 1.0 hz nf, noise figure (db) i c = 1.0 ma, r s = 430 i c = 500 a, r s = 560 i c = 50 a, r s = 2.7 k i c = 100 a, r s = 1.6 k r s = optimum source resistance 50 100 200 500 1k 2k 5k 10k 20k 50k 6 8 10 0 4 2 nf, noise figure (db) figure 9. source resistance effects r s , source resistance (ohms) f = 1 khz i c = 50 a 100 a 500 a 1.0 ma
2n4403 http://onsemi.com 5 h parameters v ce = ?10 vdc, f = 1.0 khz, t a = 25 c this group of graphs illustrates the relationship between h fe and other aho parameters for this series of transistors. to obtain these curves, a high?gain and a low?gain unit were selected from the 2n4403 lines, and the same units were used to develop the correspondingly?numbered curves on each graph. figure 10. current gain i c , collector current (madc) 0.1 0.2 0.5 0.7 1.0 2.0 3.0 10 0.3 300 700 30 200 100 1000 h fe , current gain h ie , input impedance (ohms) figure 11. input impedance i c , collector current (madc) 100k 100 50 5.0 7.0 20k 10k 5k 2k 1k 0.1 0.2 0.5 0.7 1.0 2.0 3.0 10 0.3 5.0 7.0 figure 12. voltage feedback ratio i c , collector current (madc) 0.1 0.2 0.5 0.7 1.0 2.0 3.0 10 0.3 0.1 20 figure 13. output admittance i c , collector current (madc) 500 1.0 5.0 7.0 50 20 10 5.0 2.0 5.0 2.0 1.0 0.5 0.2 h , output admittance ( mhos) oe h , voltage feedback ratio (x 10 ) re -4 2n4403 unit 1 2n4403 unit 2 0.1 0.2 0.5 0.7 1.0 2.0 3.0 10 0.3 5.0 7.0 500 70 50k 500 200 2n4403 unit 1 2n4403 unit 2 2n4403 unit 1 2n4403 unit 2 10 2n4403 unit 1 2n4403 unit 2 100
2n4403 http://onsemi.com 6 static characteristics figure 14. dc current gain i c , collector current (ma) figure 15. collector saturation region i b , base current (ma) 0.4 0.6 0.8 1.0 0.2 0.1 v , collector-emitter voltage (volts) 0.5 2.0 3.0 50 0.2 0.3 0 1.0 0.7 5.0 7.0 ce i c = 1.0 ma 0.07 0.05 0.03 0.02 0.01 10 ma 100 ma 10 20 30 0.3 0.5 0.7 1.0 3.0 0.1 h , normalized current gain 0.5 2.0 3.0 10 50 70 0.2 0.3 0.2 100 1.0 0.7 500 30 20 5.0 7.0 fe t j = 125 c -55 c 2.0 200 300 25 c v ce = 1.0 v v ce = 10 v figure 16. aono voltages i c , collector current (ma) 0.4 0.6 0.8 1.0 0.2 figure 17. temperature coefficients i c , collector current (ma) voltage (volts) 1.0 2.0 5.0 10 20 50 0 100 0.5 0 0.5 1.0 1.5 2.0 500 t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be(sat) @ v ce = 10 v vc for v ce(sat) vs for v be 200 0.1 0.2 0.5 coefficient (mv/ c) 2.5 1.0 2.0 5.0 10 20 50 100 500 200 0.1 0.2 0.5 500 ma 0.005
2n4403 http://onsemi.com 7 package dimensions to?92 to?226aa case 29?11 issue al notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. contour of package beyond dimension r is uncontrolled. 4. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p j l b k g h section x?x c v d n n xx seating plane dim min max min max millimeters inches a 0.175 0.205 4.45 5.20 b 0.170 0.210 4.32 5.33 c 0.125 0.165 3.18 4.19 d 0.016 0.021 0.407 0.533 g 0.045 0.055 1.15 1.39 h 0.095 0.105 2.42 2.66 j 0.015 0.020 0.39 0.50 k 0.500 --- 12.70 --- l 0.250 --- 6.35 --- n 0.080 0.105 2.04 2.66 p --- 0.100 --- 2.54 r 0.115 --- 2.93 --- v 0.135 --- 3.43 --- 1 style 1: pin 1. emitter 2. base 3. collector
2n4403 http://onsemi.com 8 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, in cluding without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different a pplications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical e xperts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc prod uct could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indem nify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney f ees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was neglig ent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 2n4403/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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